1 www.fairchildsemi.com ?2012 fairchild semiconductor corporation FQD16N25C rev. c0 FQD16N25C n-channel qfet ? mosfet FQD16N25C n-channel qfet ? m osfet 250 v, 16 a, 270 m ? 16 a, 250 v, r ds(on) = 270 m (max.) @ v gs = 10 v , i d = 8 a ? low gate charge (typ. 41 nc) ? low crss (ty p. 68 pf) ? 100% avalanche tested description this n-channel enhancement mode power mosfet is produced using fairchild semiconductor ? s proprietary planar stripe and dmos technology. this advanced mosfet technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. these devices are suitable for switched mode power supplies, ac tive power factor correction (pfc), and elec tronic lamp ballasts.. d g s d-pak absolute maximum ratings symbol parameter FQD16N25C unit v dss drain-source voltage 250 v i d drain current - continuous (t c = 25c) 16 a - continuous (t c = 100c) 10.1 a i dm drain current - pulsed (note 1) 64 a v gss gate-source voltage 30 v e as single pulsed avalanche energy (note 2) 432 mj i ar avalanche current (note 1) 16 a e ar repetitive avalanche energy (note 1) 160 mj dv/dt peak diode recovery dv/dt (note 3) 5.5 v/ns p d power dissipation (t c = 25c) 160 w - derate above 25c 1.28 w/ c t j , t stg operating and storage temperature range -55 to +150 c t l maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds 300 c thermal characteristics symbol parameter FQD16N25C unit r jc thermal resistance, junction-to-case , max. 0.78 c / w r ja thermal resistance, junction-to-ambient , max. 110 c / w features april 2013 g s d
2 package marking and ordering information device marking device package reel size tape width quantity FQD16N25C FQD16N25Ctm d-pak 380mm 16mm 2,500 FQD16N25C FQD16N25Ctf d-pak 380mm 16mm 2,000 electrical characteristics t c = 25c unless otherwise noted symbol parameter test conditions min typ max unit off characteristics bv dss drain-source breakdown voltage v gs = 0 v, i d = 250 a 250 -- -- v bv dss / t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25c -- 0.31 -- v/c i dss zero gate voltage drain current v ds = 250 v, v gs = 0 v -- -- 10 a v ds = 200 v, t c = 125c -- -- 100 a i gssf gate-body leakage current, forward v gs = 30 v, v ds = 0 v -- -- 100 na i gssr gate-body leakage current, reverse v gs = -30 v, v ds = 0 v -- -- -100 na on characteristics v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 2.0 -- 4.0 v r ds(on) static drain-source on-resistance v gs = 10 v, i d = 8a -- 0.22 0.27 g fs forward transconductance v ds = 40 v, i d =8 a (note 4) -- 10.5 -- s dynamic characteristics c iss input capacitance v ds = 25 v, v gs = 0 v, f = 1.0 mhz -- 830 1080 pf c oss output capacitance -- 170 220 pf c rss reverse transfer capacitance -- 68 89 pf switching characteristics t d(on) turn-on delay time v dd = 125 v, i d = 16a, r g = 25 (note 4, 5) -- 15 40 ns t r turn-on rise time -- 130 270 ns t d(off) turn-off delay time -- 135 280 ns t f turn-off fall time -- 105 220 ns q g total gate charge v ds = 200 v, i d = 16a, v gs = 10 v (note 4, 5) -- 41 53.5 nc q gs gate-source charge -- 5.6 -- nc q gd gate-drain charge -- 22.7 -- nc drain-source diode characteristics and maximum ratings i s maximum continuous drain-source diode forward current -- -- 16 a i sm maximum pulsed drain-source diode forward current -- -- 64 a v sd drain-source diode forward voltage v gs = 0 v, i s = 16 a -- -- 1.5 v t rr reverse recovery time v gs = 0 v, i s = 16 a, di f / dt = 100 a/ s (note 4) -- 260 -- ns q rr reverse recovery charge -- 2.47 -- c notes: 1. repetitive rating : pulse width limited by maximum junction temperature 2. l = 2.7mh, i as = 16a, v dd = 50v, r g = 25 , starting t j = 25c 3. i sd 16a, di/dt 300a/ s, v dd bv dss, starting t j = 25c 4. pulse test : pulse width 300 s, duty cycle 2% 5. essentially independent of operating temperature FQD16N25C n-channel qfet ? mosfet www.fairchildsemi.com ?2012 fairchild semiconductor corporation FQD16N25C rev. c0
3 typical performance characteristics figure 1. on-region characteristics f igure 2. transfer characteristics 24681 0 10 -1 10 0 10 1 150 o c 25 o c -55 o c notes : 1. v ds = 40v 2. 250 s pulse test i d , drain current [a] v gs , gate-source voltage [v] 10 -1 10 0 10 1 10 -1 10 0 10 1 v gs top : 15.0 v 10.0 v 8.0 v 7.0 v 6.5 v 6.0 v 5.5 v 5.0 v bottom : 4.5 v notes : 1. 250 s pulse test 2. t c = 25 i d , drain current [a] v ds , drain-source voltage [v] figure 3. on-resistance variation vs. figure 4. body diode forward voltage drain current and gate vo ltage variati on vs . sourc e current and temperatue 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 10 -1 10 0 10 1 150 notes : 1. v gs = 0v 2. 250 s pulse test 25 i dr , reverse drain current [a] v sd , source-drain voltage [v] 0 1 02 03 04 05 0 0.0 0.5 1.0 1.5 v gs = 20v v gs = 10v note : t j = 25 r ds(on) [ ], drain-source on-resistance i d , drain current [a] figure 5. capacitance characteristics f igure 6. gate charge characteristics 10 -1 10 0 10 1 0 500 1000 1500 2000 2500 3000 c iss = c gs + c gd (c ds = shorted) c oss = c ds + c gd c rss = c gd notes : 1. v gs = 0 v 2. f = 1 mhz c rss c oss c iss capacitance [pf] v ds , drain-source voltage [v] 0 1 02 03 04 05 0 0 2 4 6 8 10 12 v ds = 125v v ds = 50v v ds = 200v note : i d = 15.6a v gs , gate-source voltage [v] q g , total gate charge [nc] FQD16N25C n-channel qfet ? mosfet www.fairchildsemi.com ?2012 fairchild semiconductor corporation FQD16N25C rev. c0
4 typical performance characteristics (continued) figure 7. breakdown voltage variatio n figure 8. on-resistance variation vs. temperature vs. temperature -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 notes : 1. v gs = 10 v 2. i d = 8.9 a r ds(on) , (normalized) drain-source on-resistance t j , junction temperature [ o c] -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 notes : 1. v gs = 0 v 2. i d = 250 a bv dss , (normalized) drain-source breakdown voltage t j , junction temperature [ o c] figure 9. maximum safe operating area figure 10. maximum drain current vs. case temperature 25 50 75 100 125 150 0 5 10 15 20 i d , drain current [a] t c , case temperature [ o c] 10 0 10 1 10 2 10 -1 10 0 10 1 10 2 dc 100ms 10ms 1ms 100 s 10 s operation in this area is limited by r ds(on) * notes : 1. t c = 25 o c 2. t j = 150 o c 3. single pulse i d , drain current [a] v ds , drain-sourcevoltage[v] figure 11. transient thermal response curve 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 * notes : 1. z ?jc (t) = 0.78 0 c/w max. 2. duty factor, d=t 1 /t 2 3. t jm - t c = p dm * z ?jc (t) single pulse d=0.5 0.02 0.2 0.05 0.1 0.01 z ?jc (t), thermal response t 1 , square wave pulse duration [sec] t 1 p dm t 2 FQD16N25C n-channel qfet ? mosfet www.fairchildsemi.com ?2012 fairchild semiconductor corporation FQD16N25C rev. c0
gate charge test circuit & waveform resistive switching test circuit & waveforms unclamped inductive switching test circuit & waveforms 5 FQD16N25C n-channel qfet ? mosfet www.fairchildsemi.com ?2012 fairchild semiconductor corporation FQD16N25C rev. c0
peak diode recovery dv/dt test circuit & waveforms 6 FQD16N25C n-channel qfet ? mosfet www.fairchildsemi.com ?2012 fairchild semiconductor corporation FQD16N25C rev. c0
mechanical dimensions dimensions in millimeters d-pak FQD16N25C n-channel qfet ? mosfet 7 www.fairchildsemi.com ?2012 fair c h i l d se micond u c t o r cor p o ration f q d 1 6 n 2 5 c r e v . c 0
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FQD16N25C n-channel qfet ? mosfet 8
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